bfy6 40 ifag imm rpd d hi r 1 of 3 v1 , june 20 1 0 hirel npn silicon germanium rf transistor ? hirel discrete and microwave semiconductor ? high gain low noise rf transistor ? high maximum stable gain: g ms 24db at 1.8 ghz ? n oise figure f = 0. 8 db at 1.8 ghz n oise figure f = 1 . 1 db at 6 ghz ? hermetically sealed microwave package esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking pin configuration 1 2 3 4 package bfy6 40b - c e b e micro - x maximum ratings parameter symbol values unit collector - emitter voltage t a > 0 c t a 0 c v ceo 4. 0 3. 7 v v collector - base voltage v cbo 13 v emitter - base voltage v ebo 1.2 v collector current 1) i c 5 0 ma base current i b 3 ma junction temperature t j 175 ? c operating temperature range t op - 65...+175 ? c storage temperature range t stg - 65...+175 ? c thermal resistance junction - soldering point 2) r th js 325 k/w notes.: 1) for t a > 25c the derating of i c has to be considered . nomograms will be available on request. 2) t s is measured on the emittter lead at the soldering point to the pcb. 1 2 3 4
bfy6 40 ifag imm rpd d hi r 2 of 3 v1 , june 20 1 0 electrical characteristics at t a =25c; unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector - base cutoff current v cb = 5 v, i e = 0 i cbo - - 10 a collector - emitter cutoff current 1) v ce = 4.0 v, i b = 0 . 1 a i cex - - 200 a emitter - base cuttoff current v eb = 1. 2 v, i c = 0 i ebo - - 5 ? c = 3 0 ma, v ce = 3 v h fe 1 35 18 0 2 5 0 - ac characteristics collector - base capacitance v cb = 2 v, v be = vbe = 0, f = 1 mhz c cb - 0. 07 - pf collector - emitter capacitance v ce = 2 v, v be = vbe = 0, f = 1 mhz c ce - 0 . 45 - pf emitter - base capacitance v eb = 0.5v, v cb = vcb = 0, f = 1 mhz c eb - 0. 6 - pf noise figure (z s = z sopt) i c = 5 ma, v ce = 3 v, f = 1.8 ghz i c = 5 ma, v ce = 3 v, f = 6.0 ghz f - - 0. 8 1 . 1 - - db insertion power gain ( z s = z l = 50 ? c = 3 0 ma, v ce = 3 v, f = 1 . 8 ghz i c = 3 0 ma, v ce = 3 v, f = 6.0 ghz |s 21e | 2 - - 2 2.5 1 2.5 - - db power gain (z s = z sopt , z l = z lopt ) i c = 3 0 ma, v ce = 3 v, f = 1.8 ghz g ms 2 ) - 2 4 - db power gain (z s = z sopt , z l = z lopt ) i c = 3 0 ma, v ce = 3 v, f = 6.0 ghz g ma 2 ) - 1 4 - db notes.: 1) this test assures v(br)ce0 > 4.0v 2 ) , g s s k k ma ? ? ? 21 12 1 2 ( ) g s s ms ? 21 12
bfy6 40 ifag imm rpd d hi r 3 of 3 v1 , june 20 1 0 micro - x package edition 20 1 0 - 0 6 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2010 all rights reserved. attention please! the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to any examples or hints given herein, any typical values stated herein and/or any information re garding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non - infringement of intellectual property rights of an third party. information fo r further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon tech nologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 1 2 3 4
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